Method of making a TFT array with photo-imageable insulating layer over address lines

ABSTRACT

This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

This is a continuation of application Ser. No. 09/357,889, filed Jul.21, 1999, now U.S. Pat. No. 6,307,215; which is a divisional ofapplication Ser. No. 09/630,984, filed Apr. 12, 1996, now U.S. Pat. No.6,372,534; which is a CIP of 09/470,271, filed Jun. 6, 1995, nowabandoned, which are all incorporated herein by reference.

Additionally, this application is related to a commonly ownedapplication filed simultaneously entitled LCD WITH BUS LINES OVERLAPPEDBY PIXEL ELECTRODES AND PHOTO-IMAGEABLE INSULATING LAYER THEREBETWEEN.

This invention relates to a method of making a TFT array for a liquidcrystal display (LCD) or image sensor having an increased pixel apertureratio. More particularly, this invention relates to a method of makingan array of TFTs wherein a photo-imageable insulating layer having aplurality of contact vias or apertures disposed therein is locatedbetween the address lines and pixel electrodes so that the pixelelectrodes are permitted to overlap the row and column address lineswithout exposing the system to capacitive cross-talk.

BACKGROUND OF THE INVENTION

Electronic matrix arrays find considerable application in X-ray imagesensors and active matrix liquid crystal displays (AMLCDs). Such devicesgenerally include X and Y (or row and column) address lines which arehorizontally and vertically spaced apart and cross at an angle to oneanother thereby forming a plurality of crossover points. Associated witheach crossover point is an element (e.g. pixel) to be selectivelyaddressed. These elements in many instances are liquid crystal displaypixels or alternatively the memory cells or pixels of an electronicallyadjustable memory array or X-ray sensor array.

Typically, a switching or isolation device such as a diode or thin filmtransistor (TFT) is associated with each array element or pixel. Theisolation devices permit the individual pixels to be selectivelyaddressed by the application of suitable potentials between respectivepairs of the X and Y address lines. Thus, the TFTs act as switchingelements for energizing or otherwise addressing corresponding pixelelectrodes.

Amorphous silicon (a-Si) TFTs have found wide usage for isolationdevices in liquid crystal display (LCD) arrays. Structurally, TFTsgenerally include substantially co-planar source and drain electrodes, athin film semiconductor material (e.g. a-Si) disposed between the sourceand drain electrodes, and a gate electrode in proximity to thesemiconductor but electrically insulated therefrom by a gate insulator.Current flow through the TFT between the source and drain is controlledby the application of voltage to the gate electrode. The voltage to thegate electrode produces an electric field which accumulates a chargedregion near the semiconductor-gate insulator interface. This chargedregion forms a current conducting channel in the semiconductor throughwhich current is conducted. Thus, by controlling the voltage to the gateand drain electrodes, the pixels of an AMLCD may be switched on and offin a known manner.

Typically, pixel aperture ratios (i.e. pixel openings) innon-overlapping AMLCDs are only about 50% or less. As a result, eitherdisplay luminance is limited or backlight power consumption isexcessive, thereby precluding or limiting use in certain applications.Thus, it is known in the art that it is desirable to increase the pixelaperture ratio or pixel opening size of LCDs to as high a value aspossible so as to circumvent these problems. The higher the pixelaperture ratio (or pixel opening size) of a display, for example, thehigher the display transmission. Thus, by increasing the pixel apertureratio of a display, transmission may be increased using the samebacklight power, or alternatively, the backlight power consumption maybe reduced while maintaining the same display luminance.

It is known to overlap pixel electrodes over address lines in order toincrease the pixel aperture ratio. For example, “High-Aperture TFT ArrayStructures” by K. Suzuki discusses an LCD having an ITO shield planeconfiguration having a pixel aperture ratio of 40% and pixel electrodeswhich overlap signal bus lines. An ITO pattern in Suzuki located betweenthe pixel electrodes and the signal lines functions as a ground plane soas to reduce coupling capacitance between the signal lines and the pixelelectrode. Unfortunately, it is not always desirable to have a shieldelectrode disposed along the length of the signal lines as in Suzuki dueto production and cost considerations. The disposition of the shieldlayer as described by Suzuki requires extra processing steps and thuspresents yield problems. Accordingly, there exists a need in the art fora LCD with an increased pixel aperture ratio which does not require anITO shield plane structure to be disposed between the signal lines andpixel electrode.

It is old and well-known to make TFT arrays for LCDs wherein addresslines and overlapping pixel electrodes are insulated from one another byan insulating layer. For example, see U.S. Pat. Nos. 5,055,899;5,182,620; 5,414,547; 5,426,523; 5,446,562; 5,453,857; and 5,457,553.

U.S. Pat. No. 5,182,620 discloses an AMLCD including pixel electrodeswhich at least partially overlay the address lines and additionalcapacitor lines thereby achieving a larger numerical aperture for thedisplay. The pixel electrodes are insulated from the address lines whichthey overlap by an insulating layer formed of silicon oxide or siliconnitride. Unfortunately, the method of making this display as well as theresulting structure are less than desirable because: (i) chemical vapordeposition (CVD) is required to deposit the silicon oxide or siliconnitride insulating film; and (ii) silicon oxide and silicon nitride arenot photo-imageable (i.e. contact holes or vias must be formed in suchinsulating layers by way of etching). As a result of these two problems,the manufacturing process is both expensive and requires more steps thanwould be otherwise desirable. For example, in order to etch the contactholes in an insulating layer, an additional photo-resist coating step isrequired and the user must be concerned about layers underneath theinsulating layer during etching. With respect to CVD, this is adeposition process requiring expensive equipment.

U.S. Pat. No. 5,453,857 discloses an AMLCD having a TFT array with pixelelectrodes formed in an overlapping relation with source signal linesthrough an insulating thin film. The insulating thin film formed betweenthe signal lines and the pixel electrodes is made of either SiN_(x),SiO₂, TaO_(x) or Al₂O₃. Unfortunately, the method of making the arrayand resulting display of the '857 patent suffers from the same problemsdiscussed above with respect to the '620 patent. None of the possibleinsulating layer materials are photo-imageable and etching is required.

U.S. Pat. No. 5,055,899 discloses a TFT array including an insulatingfilm disposed between the address lines and pixel electrodes. Again,etching is required to form the vias in the insulating film. This isundesirable.

U.S. Pat. No. 5,426,523 discloses an LCD including overlapping pixelelectrodes and source bus lines, with a silicon oxide insulating filmdisposed therebetween. Silicon oxide is not photo-imageable and thusnecessitates a prolonged and more difficult manufacturing process forthe TFT array and resulting AMLCD.

It is apparent from the above that there exists a need in the art for animproved method for manufacturing a TFT array and/or resulting LCDhaving an increased pixel aperture ratio and little capacitivecross-talk. The method of manufacture, which is improved relative to theprior art, should include forming a photo-imageable insulating layerbetween pixel electrodes and overlapped bus lines and the vias thereinby way of photo-imaging as opposed to resist coating, exposure anddeveloping, and wet or dry etching. The method should be simpler,cheaper, and more efficient to carry out.

It is a purpose of this invention to fulfill the above-described needsin the art, as well as other needs which will become apparent to theskilled artisan from the following detailed description of thisinvention.

SUMMARY OF THE INVENTION

Generally speaking, this invention fulfills the above-described needs inthe art by providing a method of making an array of a-Si semiconductorbased thin film transitors (TFTs), the method comprising the steps of:

providing a first substantially transparent substrate;

forming an array of TFTs and corresponding address lines on the firstsubstrate;

depositing an organic photo-imageable insulating layer over the TFTarray and corresponding address lines;

photo-imaging the insulating layer in order to form a first array ofvias or contact holes therein; and

forming an array of electrode members on the first substrate over thephoto-imaged insulating layer so that the electrode members in the arrayare in communication with the TFTs through the first array of vias orcontact holes.

In certain preferred embodiments, the method includes the step ofoverlapping the address lines with the electrode members so that thephoto-imaged insulating layer is disposed therebetween so as to increasethe pixel aperture and reduce cross-talk.

In still further preferred embodiments, the method comprises the stepsof: (i) using the TFT array in one of a liquid crystal display and anX-ray image sensor, and (ii) forming the insulating layer so as toinclude one of photo-imageable Benzocyclobutene (BCB) and 2-Ethoxyethylacetate.

This invention further fulfills the above-described needs in the art byproviding a method of making a liquid crystal display including an arrayof semiconductor switching elements, the method comprising the steps of:

a) providing a first substrate;

b) providing an array of semiconductor based switching elements andcorresponding address lines on the first substrate;

c) spin coating an organic photo-imageable insulating layer on the firstsubstrate over the switching elements and address lines;

d) photo-imaging the insulating layer in order to form a first group ofvias or contact holes therein, each via in the first group correspondingto one of the switching elements; and

e) forming an array of pixel electrodes over the photo-imaged insulatinglayer so that each pixel electrode communicates with one of theswitching elements through one of the vias in the insulating layer.

This invention still further fulfills the above-described needs in theart by providing a method of making a TFT array comprising the steps of:

a) providing a first substantially transparent substrate;

b) forming a plurality of TFT gate electrodes connected to gate lines onthe substrate;

c) forming a gate insulating layer over the gate electrodes;

d) forming and patterning a semiconductor layer over each of the gateelectrodes in TFT areas;

e) forming TFT source and drain electrodes in each TFT area with a TFTchannel defined therebetween, and a plurality of corresponding drainlines, thereby forming an array of TFTs on the first substrate;

f) depositing a photo-imageable insulating layer over a substantialportion of the substrate so as to cover substantial portions of the gateand drain lines and the TFTs in the array;

g) photo-imaging the insulating layer so as to form a plurality of viasor contact holes therein, at least one via corresponding to each TFT inthe array;

h) forming a plurality of pixel electrodes over the insulating layer sothat each pixel electrode is in communication with the source electrodeof a corresponding TFT through one of the vias; and

i) forming the pixel electrodes on the substrate so that each pixelelectrode overlaps at least one of the drain and gate lines whereby thepixel electrodes are insulated from the address lines in the overlapareas by the photo-imaged insulating layer.

This invention will now be described with reference to certainembodiments thereof as illustrated in the following drawings.

IN THE DRAWINGS

FIG. 1 is a top view of an AMLCD according to this invention, thisfigure illustrating pixel electrodes overlapping surrounding row andcolumn address lines along their respective lengths throughout thedisplay's pixel area so as to increase the pixel aperture ratio of thedisplay.

FIG. 2 is a top view of the column (or drain) address lines andcorresponding drain electrodes of FIG. 1, this figure also illustratingthe TFT source electrodes disposed adjacent the drain electrodes so asto define the TFT channels.

FIG. 3 is a top view of the pixel electrodes of FIG. 1 except for theirextensions.

FIG. 4 is a side elevational cross-sectional view of the linear-shapedthin film transistors (TFTs) of FIGS. 1-2.

FIG. 5 is a side elevational cross-sectional view of the liquid crystaldisplay of FIG. 1.

FIG. 6 is a top or bottom view of the optional black matrix to belocated on a substrate of the LCD of FIGS. 1-5, the black matrix to belocated on the substrate not having the TFT array disposed thereon.

FIG. 7 is a side cross-sectional view of a portion of the LCD of FIGS.1-6, this figure illustrating the pixel electrodes overlapping thecolumn address lines.

FIGS. 8-11 are side elevational cross-sectional views illustrating how aTFT in an array according to this invention is manufactured.

DETAILED DESCRIPTION OF CERTAIN EMBODIMENTS OF THIS INVENTION

Referring now more particularly to the accompanying drawings in whichlike reference numerals indicate like parts throughout the severalviews.

FIG. 1 is a top view of four pixels in an array of an active matrixliquid crystal display (AMLCD) 2 according to an embodiment of thisinvention. This portion of the display includes pixel electrodes 3,drain address lines 5, gate address lines 7, an array of four thin filmtransistors (TFTs) 9, and auxiliary storage capacitors 11 associatedwith each pixel. Each storage capacitor 11 is defined on one side by agate line 7 and on the other side by an independent storage capacitorelectrode 12. Storage capacitor electrodes 12 are formed along withdrain electrodes 13. As shown, the longitudinally extending edges ofeach pixel electrode 3 overlap drain lines 5 and gate lines 7respectively along the edges thereof so as to increase the pixelaperture ratio (or pixel opening size) of the LCD.

In the areas of overlap 18 between pixel electrodes 3 and address or buslines 5, 7, a pixel-line (PL) capacitor is defined by an electrode 3 onone side and the overlapped address line on the other. The dielectricdisposed between the electrodes of these PL capacitors is insulationlayer 33 (see FIGS. 4 and 7). The parasitic capacitance C_(PL) of thesecapacitors is defined by the equation:$C_{PL} = \frac{\varepsilon \cdot \varepsilon_{0} \cdot A}{d}$

where “d” is the thickness of layer 33, ε is the dielectric constant oflayer 33, ε₀ is the constant 8.85×10⁻¹⁴ F/cm (permitivity in vacuum),and “A” is the area of the PL capacitor in overlap areas 18. Thefringing capacitance may also be taken into consideration in a knownmanner. See Chart 1 below for certain embodiments. Also, according toother embodiments, C_(PL) is less than or equal to about 0.01 pF for adisplay with a pixel pitch of about 150 μm. When the pixel pitch issmaller, C_(PL) should be scaled to a lower value as well becauseoverlap areas 18 are smaller. Additionally, the pixel aperture ratio ofan LCD decreases as the pixel pitch decreases as is known in the art.The pixel pitch of AMLCD 2 may be from about 40 to 5,000 μm according tocertain embodiments of this invention. The pixel pitch as known in theart is the distance between centers of adjacent pixels in the array.

FIG. 2 is a top view of drain address lines 5 of AMLCD 2 showing howextensions of address lines 5 form drain electrodes 13 of TFTs 9. EachTFT 9 in the array of AMLCD 2 includes source electrode 15, drainelectrode 13, and gate electrode 17. Gate electrode 17 of each TFT 9 isformed by the corresponding gate address line 7 adjacent the TFTaccording to certain embodiments. According to other embodiments, thegate electrode 17 may be formed by a branch extending substantiallyperpendicular to the gate line.

FIG. 3 is a top view illustrating pixel electrodes 3 (absent theirextension portions 38) of AMLCD 2 arranged in array form. FIGS. 2-3 areprovided so that FIG. 1 may be more easily interpreted.

FIG. 4 is a side elevational cross-sectional view of a single thin filmtransistor (TFT) 9 in the TFT array of AMLCD 2, with each TFT 9 in thearray being substantially the same according to preferred embodiments.Each linear TFT 9 has a channel length “L” defined by the gap 27 betweensource electrode 15 and drain electrode 13. Source electrode 15 isconnected to pixel electrode 3 by way of via or contact hole 35 so as topermit TFT 9 to act as a switching element and selectively energize acorresponding pixel in AMLCD 2 in order to provide image data to aviewer. An array of TFTs 9 is provided as illustrated in FIG. 1 forAMLCD 2.

Each TFT 9 structure includes substantially transparent substrate 19(e.g. made of glass), metal gate electrode 17, gate insulating layer orfilm 21, semiconductor layer 23 (e.g. intrinsic amorphous silicon),doped semiconductor contact layer 25, drain electrode 13, sourceelectrode 15, substantially transparent insulation layer 33, and acorresponding pixel electrode 3. TFT channel 27 of length “L” is definedbetween source 15 and drain 13.

As shown in FIG. 4, drain electrode 13 is made up of drain metal layer29 (e.g. Mo) which is deposited on substrate 19 over top of dopedcontact layer 25. Contact film or layer 25 may be, for example,amorphous silicon doped with an impurity such as phosphorous (i.e.n+a-Si) and is sandwiched between semiconductor layer 23 and drain metallayer 29. Source electrode 15 includes doped semiconductor contact layer25 and source metal layer 31. Metal layers 29 and 31 may be of the samemetal and deposited and patterned together according to certainembodiments of this invention. Alternatively, layer 29 may be depositedand patterned separately from layer 31 so that drain metal layer is ofone metal (e.g. Mo) and source metal layer 31 is of another (e.g. Cr).

Substantially transparent insulating layer 33 having a dielectricconstant less than about 5.0 is deposited as a sheet on substrate 19 soas to cover TFTs 9 and address lines 5 and 7. Layer 33 is formed of aphoto-imageable material such as Fuji Clear™ or a photo-imageable typeof BCB. Insulating layer 33 is continuous in the viewing area of thedisplay except for vias or contact holes 35 and 36 formed therein toallow pixel electrodes 3 to contact corresponding TFT source electrodesand the storage capacitor electrodes respectively (i.e. each pixelincludes two vias (35 and 36) in insulating layer 33—one for the sourceelectrode and the other for the storage capacitor).

Layer 33 has a dielectric constant ε less than or equal to about 5.0according to certain embodiments of this invention. In certain preferredembodiments, layer 33 has a dielectric constant of about 2.7 and is madeof a photo-imageable type of Benzocyclobutene (BCB), an organic materialavailable from Dow Chemical, for the purpose of reducing capacitivecross-talk (or capacitive coupling) between pixel electrodes 3 and theaddress lines in overlap areas 18. Layer 33 has a low dielectricconstant and/or a relatively large thickness for the specific purpose ofreducing C_(PL) in overlap areas 18.

Alternatively, layer 33 may be of a photo-imageable material known asFuji Clear™, which is an organic mixture including 2-Ethoxyethyl acetate(55-70%), methacrylate derivative copolymer (10-20%), and polyfunctionalacrylate (10-20%).

Following the deposition of insulation layer 33 on substrate 19 over topof TFTs 9 and address lines 5 and 7, vias 35 and 36 are formed ininsulation layer 33 by way of photo-imaging. Layer 33 acts as a negativeresist so that UV exposed areas remain on the substrate and areas oflayer 33 unexposed to UV during photo-imaging are removed duringdeveloping. Following the forming of vias 35 and 36, substantiallytransparent pixel electrodes 3 (made of indium-tin-oxide or ITO) aredeposited and patterned over layer 33 on substrate 19 so that the pixelelectrodes 3 contact the corresponding source metal layers 31 ofcorresponding TFTs 9 through vias 35 as illustrated in FIG. 4. Auxiliaryvias 36 (see FIG. 1) are formed in layer 33 at the same time as vias 35so that pixel electrodes 3 can contact storage capacitor electrodes 12via pixel electrode extensions 38. Peripheral lead areas and seal areasare also removed by photo-imaging.

Insulating layer 33 is deposited on substrate 19 over the address lines,storage capacitors, and TFTs to a thickness “d” of at least about 0.5 μmin overlap areas 18. In preferred embodiments, the thickness “d” ofinsulating layer 33 is from about 1 to 2.5 μm.

Another advantage of layer 33, is that liquid crystal layerdisclinations induced at pixel electrode 3 edges by the topography ofTFTs 9, storage capacitors, and address lines are substantiallyeliminated by planarization (i.e. few, if any, hills and valleys arepresent in the top surface of layer 33). Thus, the thickness of the LClayer is substantially maintained and display functionality is improvedbecause electrodes 3 are substantially flat because of the substantialplanarization of the surface of layer 33 adjacent the pixel electrodes3.

Because of the low dielectric constant ε and/or relatively highthickness “d” of layer 33, the capacitive cross-talk problems of theprior art resulting from overly high C_(PL) values are substantiallyreduced in areas 18 where pixel electrodes 3 overlap address lines 5and/or 7. Because layer 33 is disposed between pixel electrodes 3 andthe overlapped address lines, the capacitive cross-talk problems of theprior art are substantially reduced or eliminated and increased pixelopenings are achievable without sacrificing display performance (pixelisolation).

Pixel opening sizes or the pixel aperture ratio of AMLCD 2 is at leastabout 65% (preferably from about 68% to 80%) according to certainembodiments of this invention when the pixel pitch is about 150 μm. Thiswill, of course, vary depending upon the pixel pitch of the display(pixel pitches of from about 40-500 μm may be used). Pixel electrodes 3overlap address lines 5 and 7 along the edges thereof as shown in FIG. 1by an amount up to about 3 μm. In certain preferred embodiments of thisinvention, the overlap 18 of electrodes 3 over the edges of addresslines 5 and 7 is designed to be from about 2 to 3 μm, with the endresult after overetching being at least about 0.5 μm. According tocertain other embodiments of this invention, the amount of overlap maybe designed to be from about 2-3 μm, with the resulting post-processingoverlap being from about 0 to 2 μm. The overlap amount may be adjustedin accordance with different LCD applications and pixel pitch sizes aswill be appreciated by those of skill in the art.

In certain situations, after etching and processing, pixel electrodes 3may not overlap the address lines at all according to certainembodiments of this invention, although some overlap 18 is preferred.When no overlap occurs, the parasitic capacitance C_(PL) between theaddress lines and the adjacent pixel electrode 3 is still minimized orreduced due to insulating layer 33.

Referring now to FIGS. 4-5 and 8-11, it will be described how AMLCD 2including the array of TFT structures and corresponding address lines ismade according to an embodiment of this invention. Firstly,substantially transparent substrate 19 is provided. Next, a gate metallayer or sheet (which results in gate electrodes 17 and lines 7) isdeposited on the top surface (surface to be closest to the LC layer) ofsubstrate 19 to a thickness of from about 1,000-5,000 Å, most preferablyto a thickness of about 2,500 Å. The gate metal sheet is deposited byway of sputtering or vapor deposition. The gate metal may be of tantalum(Ta) according to certain embodiments of this invention. Insulatingsubstrate 19 may be of glass, quartz, sapphire, or the like.

The structure including substrate 19 and the deposited gate metal isthen patterned by photolithography to the desired gate electrode 17 andgate address line 7 configuration. The upper surface of the gate metalis exposed in a window where the photoresist has not been retained.

The gate metal (e.g. Ta) layer is then dry etched (preferably usingreactive ion etching) in order to pattern the gate metal layer inaccordance with the retained photoresist pattern. To do this, thestructure is mounted in a known reactive ion etching (RIE) apparatuswhich is then purged and evacuated in accordance with known RIEprocedures and etchants. This etching of the gate metal layer ispreferably carried out until the gate metal is removed in center areasof the windows and is then permitted to proceed for an additional time(e.g. 20 to 40 seconds) of overetching to ensure that the gate metal isentirely removed from within the windows. The result is gate addresslines 7 (and gate electrodes 17) being left on substrate 19.

After gate address lines 7 are deposited and patterned on top ofsubstrate 19 in the above-described manner, gate insulating ordielectric layer 21 is deposited over substantially the entire substrate19 preferably by plasma enhanced chemical vapor deposition (CVD) or someother process known to produce a high integrity dielectric. Theresulting structure is shown in FIG. 8. Gate insulating layer 21 ispreferably silicon nitride (Si₃N₄) but may also be silicon dioxide orother known dielectrics. Silicon Nitride has a dielectric constant ofabout 6.4. Gate insulating layer 21 is deposited to a thickness of fromabout 2,000-3,000 Å (preferably either about 2,000 Å or 3,000 Å)according to certain embodiments.

It is noted that after anodization (which is optional), gate Ta layer 17which was deposited as the gate electrode and gate line layer (whenoriginally about 2,500 Å thick) is about 1,800 Å thick and a newlycreated TaO layer is about 1,600 Å. Anodization takes place after thegate line patterning and before further processing. Thus, gateinsulating layer 21 over gate lines 7 and electrodes 17 is made up ofboth the anodization created TaO layer and the silicon nitride layer.Other metals from which gate electrode 17 and address line layer 7 maybe made include Cr, Al, titanium, tungsten, copper, and combinationsthereof.

Next, after gate insulating layer 21 has been deposited (FIG. 8),semiconductor (e.g. intrinsic a-Si) layer 23 is deposited on top of gateinsulating layer 21 to a thickness of about 2,000 Å. Semiconductor layer23 may be from about 1,000 Å to 4,000 Å thick in certain embodiments ofthis invention. Then, doped (typically phosphorous doped, that is n+)amorphous silicon contact layer 25 is deposited over intrinsic a-Silayer 23 in a known manner to a thickness of, for example, about 500 Å.Doped contact layer 25 may be from about 200 Å to 1,000 Å thickaccording to certain embodiments of this invention. The result is theFIG. 9 structure.

Gate insulating layer 21, semiconductor layer 23 and semiconductorcontact layer 25 may all be deposited on substrate 19 in the samedeposition chamber without breaking the vacuum according to certainembodiments of this invention. When this is done, the plasma dischargein the deposition chamber is stopped after the completion of thedeposition of a particular layer (e.g. insulating layer 21) until theproper gas composition for deposition of the next layer (e.g.semiconductor layer 23) is established. Subsequently, the plasmadischarge is re-established to deposit the next layer (e.g.semiconductor layer 23). Alternatively, layers 21, 23, and 25 may bedeposited in different chambers by any known method.

Following the formation of the FIG. 9 structure, the TFT island or areamay be formed by way of etching, for example, so that the TFT metallayers can be deposited thereon. Optionally, one of the TFT metalsource/drain layers may be deposited before forming the TFT island.

According to preferred embodiments, following the formation of the TFTisland from the FIG. 9 structure, a source-drain metal sheet or layer(which results in drain metal layer 29 and source metal layer 31) isdeposited on substrate 19 over top of semiconductor layer 23 and contactlayer 25. This source-drain metal layer may be chromium (Cr) ormolybdenum (Mo) according to certain embodiments of this invention. Whenchromium, the layer is deposited to a thickness of about 500-2,000 Å,preferably about 1,000 Å according to certain embodiments. Whenmolybdenum, the layer is deposited to a thickness of from about 2,000 to7,000 Å, preferably about 5,000 Å. The deposited source drain metallayer sheet is then patterned (masked and etched) to form the source,drain, and storage capacitor electrodes. After patterning of the TFTsource and drain electrodes, the result is the FIG. 10 TFT structure.

Alternatively, a first metal layer may be deposited and patterned toform drain electrode portion 29 and storage capacitor electrode 12, anda second metal layer may be deposited and patterned to form sourceelectrode portion 31. Thus, for example, source metal layer 31 may bechromium (Cr) while drain metal 29 and storage capacitor electrode layeris Mo according to certain embodiments of this invention. Other metalswhich may be used for the source and drain metals include titanium, Al,tungsten, tantalum, copper, or the like.

After patterning of drain and source portions 29 and 31, contact layer25 is etched in the channel 27 area and inevitably a bit ofsemiconductor layer 23 is etched along with it. The result is TFT 9 withchannel 27 as shown in FIGS. 4 and 10.

Substantially transparent polymer insulating layer 33 is then depositedonto substantially the entire substrate 19 by way of spin-coatingaccording to certain embodiments of this invention. Layer 33 may be ofeither photo-imageable BCB or Fuji Clear™ according to certainembodiments. Insulating layer 33 fills recesses generated upon formationof TFTs 9 and flattens the surface above substrate 19 at least about 60%according to certain embodiments. The result is the structure of FIG.11.

Photo-imageable insulating layer 33 acts as a negative resist layeraccording to certain embodiments of this invention so that no additionalphotoresist is needed to form vias 35 and 36 in layer 33. In order toform the vias, layer 33 is irradiated by ultraviolet (UV) rays (e.g. irays of 365 nm), with UV irradiated areas of layer 33 to remain andnon-exposed or non-radiated areas of layer 33 to be removed indeveloping. A mask may be used. Thus, the areas of the negative resist33 corresponding to vias 35 and 36 are not exposed to the UV radiation,while the rest of the layer 33 across the substrate is exposed to UV.

Following exposure of layer 33 (except in the via or contact holeareas), layer 33 is developed by using a known developing solution at aknown concentration. In the developing stage, the areas of layer 33corresponding to vias 35 and 36 are removed (i.e. dissolved) so as toform the vias in the insulating layer. After developing, the resistlayer 33 is cured or subjected to postbaking (e.g. about 240 degrees C.for about one hour) to eliminate the solvent so that the layer 33 withthe vias therein is resinified. Thus, no dry or wet etching is needed toform the vias in layer 33. According to alternative embodiments, layer33 may be a positive resist as opposed to a negative resist.

Vias or apertures 35 are thus formed in insulation layer 33 over top of(or adjacent) each source metal electrode 31 so as to permit the pixelelectrodes 3 to electrically contact corresponding source electrodes 15through vias 35. Layer 33 remains across the rest of the substrate orarray except for the auxiliary capacitor vias and certain edge areaswhere contacts must be made or glueing done.

After vias 35 and 36 are formed in layer 33, a substantially transparentconducting layer (e.g. ITO) which results in pixel electrodes 3 isdeposited and patterned (photomasked and etched) on substrate 19 overtop of layer 33. After patterning (e.g. mask and etching) of thissubstantially transparent conducting layer, pixel electrodes 3 are leftas shown in FIGS. 1 and 4. As a result of vias 35 and 36 formed in layer33, each pixel electrode 3 contacts a TFT source electrode 31 as shownin FIG. 4 and a storage capacitor electrode 12 as shown in FIG. 1. Theresult is the active plate of FIGS. 1 and 4 including an array of TFTs.The pixel electrode layer (when made of ITO) is deposited to a thicknessof from about 1,200 to 3,000 Å (preferably about 1,400 Å) according tocertain embodiments of this invention. Other known materials may be usedas pixel electrode layer 3.

After formation of the active plate, liquid crystal layer 45 is disposedand sealed between the active plate and the passive plate as shown inFIG. 5, the passive plate including substrate 51, polarizer 53,electrode 49, and orientation film 47.

As shown in FIG. 1, pixel electrodes 3 are patterned to a size so thatthey overlap both drain address lines 5 and gate address lines 7 alongthe edges thereof so as to result in an increased pixel aperture ratiofor AMLCD 2. The cross-talk problems of the prior art are substantiallyeliminated due to the presence of layer 33 in overlap areas 18 betweenpixel electrodes 3 and the address lines. Alternatively, the pixelelectrodes may only overlap one group of address lines (e.g. row lines)according to certain embodiments.

FIG. 5 is a side elevational cross-sectional view of AMLCD 2 (absent theTFTS, address lines, and black matrix). As shown, the twisted nematicdisplay includes from the rear forward toward the viewer, rear polarizer41, substantially transparent substrate 19, pixel electrodes 3, rearorientation film 43, liquid crystal layer 45, front orientation film 47,common electrode 49, front substantially transparent substrate 51, andfinally front polarizer 53. Polarizers 41 and 53 may be arranged so thattheir transmission axes are either parallel or perpendicular to eachother so as to define a normally black or normally white color AMLCDrespectively. optionally, retarder(s) may also be provided.

Typically, a backlight is provided rearward of polarizer 41 so thatlight emitted therefrom first goes through polarizer 41, then throughliquid crystal layer 45 and finally out of front polarizer 53 toward theviewer. Pixel electrodes 3 selectively work in conjunction with commonelectrode 49 so as to selectively apply voltages across liquid crystallayer 45 so as to cause an image (preferably colored according tocertain embodiments) to be viewed from the front of the display.

FIG. 6 illustrates an optional black matrix (BM) pattern 55 to bedisposed on front substrate 51 for the purpose of overlaying addresslines 5 and 7 and TFT channels 27. When the ITO of the pixel electrodes3 overlaps the address lines, the address lines themselves areeffectively the black matrix blocking light in the interpixel areas.However, low reflectance black matrix 55 with a larger than normalopening is still useful on the top (or passive) plate in order to reducespecular reflectance and to prevent ambient light incidence on the TFTchannels. Therefore, the pixel aperture ratio of the display can be madelarger because the pixel electrode area is larger and the overlapbetween the pixel electrodes on the active plate and black matrix 55 onthe passive plate can be reduced.

Black matrix structure 55 includes vertically extending regions 56 andhorizontally extending regions 57. Regions 56 are aligned with drainlines 5 while regions 57 are aligned with gate lines 7 so as to preventambient light from penetrating the display. Additionally, black matrix55 includes channel covering portions 58 which are aligned with TFTchannels 27 for the purpose of preventing ambient light from reachingamorphous silicon semiconductor layer 23 through the channels. Ascommonly known in the art, the pixel openings 65 of the display aresubstantially defined by (i.e. bounded by) black matrix regions 56 and57.

FIG. 7 is a side elevational cross-sectional view of a portion of AMLCD2. As shown, the central pixel electrode 3 illustrated in FIG. 7overlaps both column or drain address lines 5 by an amount “w” therebyincreasing the pixel electrode size relative to that of many prior artdisplays. Electrodes 3 are spaced from the address lines by a distance“d”. Also, black matrix portions 56 line up with address lines 5 so thatthe pixel aperture or opening for the center electrode 3 is defined inpart by the distance between black matrix members 56. Black matrixportions 56 and address lines 5 are both arranged so that their centralaxes correspond with the gaps between pixel electrodes 3 according tocertain embodiments of this invention. The presence of layer 33substantially reduces the parasitic capacitance of the capacitor createdbetween pixel electrodes 3 and address lines 5 in the overlap areas 18as set forth above.

This invention will now be described with respect to 15 certain examplesset forth below in Chart 1.

CHART 1 Insulating Overlap Line-Pixel Layer 33 distance DistanceCapacitance Dielectric Material “w” “d” (fF) Constant ∈ Example 1 BCB 1μm 2 μm 4.5 2.7 Example 2 BCB 2 μm 2 μm 6.9 2.7 Example 3 BCB 1 μm 1 μm6.9 2.7 Example 4 BCB 2 μm 1 μm 11.7 2.7 Example 5 Fuji 1 μm 2 μm 7.54.5 Clear ™ Example 6 Fuji 2 μm 2 μm 11.5 4.5 Clear ™ Example 7 Fuji 1μm 1 μm 11.5 4.5 Clear ™ Example 8 Fuji 2 μm 1 μm 19.4 4.5 Clear ™

The values set forth above in Chart 1 are for a display wherein the sideof each pixel electrode 3 which overlaps the address line is about 100μm long. Thus, the area of overlap is about 100 μm long. Also, thedielectric constants ε in Chart 1 and for insulating layer 33.

Distances “w” and “d” are shown in FIG. 7, with distance “w” being thewidth of the overlap and distance “d” the vertical spacing between thepixel electrodes and the overlapped address lines.

Compare the values in Chart 1 with a conventional coplanar LCD in whichthe pixel electrodes are substantially coplanar with the address linesand spaced therefrom, such a conventional LCD having a line-pixelcapacitance of about 11.8 fF (caused in part by the LC material) whenthe electrodes are spaced laterally from the address lines by about 5μm, and about 9.6 fF when the lateral spacing is about 10 μm. Thus, thehigh aperture LCDs of Examples 1-8 have a higher pixel aperture ratiothan conventional LCDs without suffering from substantially higherline-pixel capacitance values. The capacitance values set forth above inChart 1 were arrived at from the C_(PL) equation above in combinationwith taking into consideration the fringing capacitance in a knownmanner.

The line pixel capacitance (fF) is less than about 20 fF, preferablyless than or equal to about 12 fF, and most preferably less than orequal to about 7.0 fF according to this invention with the overlap areasand high pixel apertures.

Once given the above disclosure, many other features, modifications, andimprovements will become apparent to the skilled artisan. Such otherfeatures, modifications, and improvements are, therefore, considered tobe a part of this invention, the scope of which is to be determined bythe following claims.

We claim:
 1. A liquid crystal display device comprising: a substrate; an array of transistors on said substrate; a plurality of gate and data lines connected to said transistors; an array of pixel electrodes on said substrate; a plurality of pixel electrodes overlapping at least one of the gate and data lines; and a photo-imageable insulating layer on said substrate between said gate and data lines and said pixel electrodes at least in the areas of overlap and areas adjacent source electrodes of the transistors, wherein said photo-imageable insulating layer has a dielectric constant less than about 5.0, and a first group of contact vias defined therein by photo-imaging, wherein said pixel electrodes are in electrical communication with corresponding transistor source electrodes through corresponding contact vias of said first group that are defined in said insulating layer.
 2. The liquid crystal display device according to claim 1, wherein the photo-imageable insulating layer is planarized adjacent the pixel electrodes.
 3. The liquid crystal display device according to claim 1, wherein a pixel aperture ratio is at least about 65%.
 4. The liquid crystal display device according to claim 1, wherein the pixel electrode overlaps one of the drain and gate lines up to about 3 μm.
 5. The liquid crystal display device according to claim 1, wherein the thickness of the gate electrodes and the gate lines is about 2,500Å.
 6. The liquid crystal display device according to claim 1, further comprising a semiconductor layer on top of the gate insulating layer.
 7. The liquid crystal display device according to claim 6, wherein the semiconductor layer includes intrinsic a-Si.
 8. The liquid crystal display device according to claim 7, wherein the thickness of the semiconductor layer is about 2,000Å.
 9. The liquid crystal display device according to claim 6, further comprising a contact layer over the semiconductor layer.
 10. The liquid crystal display device according to claim 9, wherein the contact layer includes amorphous silicon.
 11. The liquid crystal display device according to claim 10, wherein the thickness of the contact layer is about 500Å.
 12. The liquid crystal display device according to claim 1, wherein the thickness of the pixel electrodes is about 1,400Å.
 13. The liquid crystal display device according to claim 1, wherein a pixel pitch is about 150μm. 